EN25S80 Datasheet, PDF (1/37 Pages) Eon Silicon Solution Inc. – 8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

EN25S80
EN25S80
8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
• Single power supply operation
- Full voltage range: 1.65-1.95 volt
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• 8 M-bit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
• Standard or Dual SPI
- Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#
- Dual SPI: CLK, CS#, DQ₀, DQ₁, WP#, HOLD#
• High performance
- 75MHz clock rate for one data bit
- 50MHz clock rate for two data bits
• Low power consumption
- 7 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- 256 sectors of 4-Kbyte
- 16 blocks of 64-Kbyte
- Any sector or block can be erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.3ms typical
- Sector erase time: 90ms typical
- Block erase time 500ms typical
- Chip erase time: 5 Seconds typical
• Lockable 256 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 150mil body width
- 8 pins SOP 200mil body width
- 8 contact VDFN
- All Pb-free packages are RoHS compliant
• Industrial temperature Range
GENERAL DESCRIPTION
The EN25S80 is an 8 Megabit (1024K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25S80 supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Dual I/O using SPI pins: Serial Clock, Chip Select, Serial DQ₀(DI)
and DQ₁(DO). SPI clock frequencies of up to 50MHz are supported allowing equivalent clock rates of
100MHz for Dual Output when using the Dual Output Fast Read instructions. The memory can be
programmed 1 to 256 bytes at a time, using the Page Program instruction.
The EN25S80 also offers a sophisticated method for protecting individual blocks against erroneous or
malicious program and erase operations. By providing the ability to individually protect and unprotect
blocks, a system can unprotect a specific block to modify its contents while keeping the remaining
blocks of the memory array securely protected. This is useful in applications where program code is
patched or updated on a subroutine or module basis, or in applications where data storage segments
need to be modified without running the risk of errant modifications to the program code segments.
The EN25S80 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25S80 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. D, Issue Date: 2009/05/15
www.eonssi.com