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| EN29GL128H_10 Datasheet, PDF (34/54 Pages) Eon Silicon Solution Inc. – 128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only | |||
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Table 13. EN29GL128 Command Definitions
EN29GL128H/L
Command
Sequence
Read
Reset
Manufacturer ID
Word
Byte
Device ID
Word
Byte
Sector Protect
Verify
Word
Byte
Program
Write to Buffer
Program Buffer to
Flash
Write to Buffer Abort
Reset
Chip Erase
Sector Erase
Erase/Program
Suspend
Erase/Program
Resume
Secured Silicon
Sector Entry
Secured Silicon
Sector Exit
CFI Query
Accelerated Program
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Bus Cycles
1 st
P
P
Cycle
Addr Data
2 nd
P
P
Cycle
Addr Data
3 rd
P
P
Cycle
Addr Data
4 th
P
P
Cycle
Addr Data
1 RA RD
5 th
P
P
Cycle
Addr Data
6 th
P
P
Cycle
Addr Data
1 XXX F0
555
2AA
4
AA
AAA
555
555
2AA
4
AA
AAA
555
555
2AA
4
AA
AAA
555
555
2AA
4
AA
AAA
555
555
2AA
6
AA
AAA
555
555
55
AAA
555
55
AAA
555
55
AAA
555
55
AAA
55 SA
000
7F
90 100
1C
000
7F
200
1C
X01 227E X0E 2221 X0F 2201
90
X02
7E X1C 21 X1E 01
(SA) 00
90 X02
01
(SA) 00
X04
01
A0 PA PD
25 SA WC PA PD WBL PD
1 SA 29
555
2AA
555
3
AA
55
F0
AAA
555
AAA
555
2AA
555
555
2AA
555
6
AA
55
80
AA
55
10
AAA
555
AAA
AAA
555
AAA
555
2AA
555
555
2AA
6 AAA AA 555 55 AAA 80 AAA AA 555 55 SA 30
1 XXX B0
1 XXX 30
3 555 AA 2AA 55 555 88
AAA
555
AAA
4 555 AA 2AA 55 555 90 XX 00
AAA
555
AAA
1 55 98
AA
2 XX A0 PA PD
Legend
X = Donât care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of the WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits AmaxâA16 uniquely select any sector.
WBL = Write Buffer Location. The address must be within the same write buffer page as PA.
WC = Word Count is the number of write buffer locations to load minus 1 and maximum value is 31 for word and byte mode.
This Data Sheet may be revised by subsequent versions
34
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. K, Issue Date: 2010/05/11
www.eonssi.com
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