EN25F10_1 Datasheet, PDF (32/32 Pages) Eon Silicon Solution Inc. – 1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

Revisions List
EN25F10
Revision No Description
Date
A
Initial release
2007/11/27
B
Remove C grade option of temperature range in page 1 and page 30 2008/06/23
C
1. Add Eon products’ New top marking “cFeon“ information on page 1. 2008/12/15
2. Add the description “Serial Interface Architecture “and modify active
current (typical) from 5mA to 12mA on page 2.
3. List the Note 4 for 90h command in Table 4 on page 10.
4. Update Table 6. Status Register Bit Locations on page 11.
5. Add Table 7. OTP Sector Address on page 22.
6. Add Note “ Vcc (max) is 3.6V and Vcc (min) is 2.7V “ in Table 8 on
page 23.
7. Modify ICC3 from "Q = open" to " DQ = open " in Table 9 on page 24
8. Correct the typo “tCLH to tCH” “tCLL to tCL” ”tHHQZ to tHHQX”
in Table 11 ans Table 12 on page 25 and 26.
9. Modify Storage Temperature from "-65 to + 125" to "-65 to +150"
on page 28
10.Delete Latch up Characteristics Table from version B.
11. Modify Figure 28. VDFN8 ( 5x6mm ) dimension A from 0.80 to 0.75
on page 31.
1. Update Page program, Sector, Block and Chip erase time (typ.)
parameter on page 2 and 25.
(1). Page program: from 1.5ms to 1.3m
(2). Sector erase: from 0.15s to 0.09s
D
(3). Block erase: from 0.8s to 0.4s
2009/04/28
(4). Chip erase: from 2s to 1.5s
2. Add the description of OTP erase command on page 9, page 22.
3. Modify the t_SHSL value from 100ns to 35ns in table 11 on page 25.
4. Remove the speed of 75MHz information from version C
E
Modify D2 of VDFN8(5x6) from 4.23 to 3.40 on page 30.
2010/05/25
This Data Sheet may be revised by subsequent versions
32
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2010/05/25
www.eonssi.com