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EN25F10_1 Datasheet, PDF (2/32 Pages) Eon Silicon Solution Inc. – 1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector | |||
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EN25F10
EN25F10
1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector
FEATURES
⢠Single power supply operation
- Full voltage range: 2.7-3.6 volt
⢠Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
⢠1 Mbit Serial Flash
- 1 M-bit/128 K-byte/512 pages
- 256 bytes per programmable page
⢠High performance
- 100MHz clock rate
⢠Low power consumption
- 12 mA typical active current
- 1 µA typical power down current
⢠Uniform Sector Architecture:
- 32 sectors of 4-Kbyte
- 4 blocks of 32-Kbyte
- Any sector or block can be
erased individually
⢠Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
⢠High performance program/erase speed
- Page program time: 1.3ms typical
- Sector erase time: 90ms typical
- Block erase time 400ms typical
- Chip erase time: 1.5 seconds typical
⢠Lockable 256 byte OTP security sector
⢠Minimum 100K endurance cycle
⢠Package Options
- 8 pins SOP 150mil body width
- 8 contact VDFN
- All Pb-free packages are RoHS compliant
⢠Industrial temperature Range
GENERAL DESCRIPTION
The EN25F10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms,
accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a
time, using the Page Program instruction.
The EN25F10 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25F10 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
2
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2010/05/25
www.eonssi.com
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