EN25B05 Datasheet, PDF (30/30 Pages) Eon Silicon Solution Inc. – 512 Kbit Serial Flash Memory with Boot and Parameter Sectors

Revisions List
EN25B05
Revision No Description
Date
A
Initial release
2006/10/18
B
1. _{Change clock rate from 50MHz to 75MHz,}
2006/12/26
Page program time 1.4 ms typical to 1.5 ms typical
Sector erase time 100 to 500 ms typical to 300 to 500 ms
Chip erase time 1 seconds to 1.5 seconds typical
in page 1
2. Correct Table 5. Manufacturer and Device Identification
(ID7-ID0) : (Bottom Boot) 30h to 95h / (Top Boot) 40h to 25h
(ID15-ID0) : 2011h to 2010h in page 9
3. Change Table 8 DC Characteristics in page 21h
(1) Add ICC3 for 75MHz
4. Change Table 10 to 75MHz AC Characteristics in page 22
(1) Change F_R from 50 to 75MHz
(2) Change f_R from 33 to 50MHz
(3) Change t_CLH from 9ns to 6ns
(4) Change t_CLL from 9ns to 6ns
(5) Change t_SHQZ from 9ns to 6ns
(6) Change t_HLQZ from 9ns to 6ns
(7) Change t_HHQZ from 9ns to 6ns
(8) Change t_CLQV from 9ns to 6ns
(9) Change Page program time 1.4ms typical to 1.5ms
(10)Change 16KB Sector erase time 0.2 / 0.4seconds to
0.5 / 1 seconds for typical and maximum
(11) Change 4KB Sector erase time 0.15 / 0.3 seconds to
0.3 / 0.6 seconds for typical and maximum
(12) Change Chip erase time 1 / 2 seconds to 1.5 / 3
seconds for typical and maximum
5. Add Table 11: 50MHz AC Characteristics in page 23
(1) Change Page program time 1.4ms typical to 1.5ms
(2) Change 16KB Sector erase time 0.2 / 0.4 seconds to
0.5 / 1 seconds for typical and maximum
(3) Change 4KB Sector erase time 0.15 / 0.3 seconds to
0.3 / 0.6 seconds for typical and maximum
(4) Change Chip erase time 1 / 2 seconds to 1.5 / 3
seconds for typical and maximum
6. Add 75MHz option in Ordering Information in page 29
This Data Sheet may be revised by subsequent versions ₃₀ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2006/12/26