EN25B05 Datasheet, PDF (23/30 Pages) Eon Silicon Solution Inc. – 512 Kbit Serial Flash Memory with Boot and Parameter Sectors

EN25B05
Table 11. 50MHz AC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
F_R
Alt
f_C
Parameter
Serial Clock Frequency for:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, RDSR, WRSR
Min
D.C.
Typ
Max
50
f_R
Serial Clock Frequency READ instruction
D.C.
33
t_CLH ¹
Serial Clock High Time
9
t_CLL1
Serial Clock Low Time
9
t_CLCH2
Serial Clock Rise Time (Slew Rate)
0.1
t_CHCL ²
Serial Clock Fall Time (Slew Rate)
0.1
t_SLCH
t_{CSS CS# Active Setup Time}
5
t_CHSH
CS# Active Hold Time
5
t_SHCH
CS# Not Active Setup Time
5
t_CHSL
CS# Not Active Hold Time
5
t_SHSL
t_{CSH CS# High Time}
100
t_SHQZ ²
t_{DIS Output Disable Time}
9
t_CLQX
t_{HO Output Hold Time}
0
t_DVCH
t_{DSU Data In Setup Time}
5
t_CHDX
t_{DH Data In Hold Time}
5
t_HLCH
HOLD# Low Setup Time ( relative to SCK )
5
t_HHCH
HOLD# High Setup Time ( relative to SCK )
5
t_CHHH
HOLD# Low Hold Time ( relative to SCK )
5
t_CHHL
HOLD# High Hold Time ( relative to SCK )
5
t_HLQZ ²
t_{HZ HOLD# Low to High-Z Output}
9
t_HHQZ ²
t_{LZ HOLD# High to Low-Z Output}
9
t_CLQV
t_V
Output Valid from SCK
9
t_WHSL3
Write Protect Setup Time before CS# Low
20
t_SHWL3
Write Protect Hold Time after CS# High
100
t_DP ²
CS# High to Deep Power-down Mode
3
t_RES1 ²
t_RES2 ²
t_W
CS# High to Standby Mode without Electronic
Signature read
CS# High to Standby Mode with Electronic
Signature read
Write Status Register Cycle Time
3
1.8
10
15
t_PP
Page Programming Time
1.5
5
Sector Erase Time 32KB sectors
t_SE
Sector Erase Time 16KB sectors
Sector Erase Time 4KB sectors
0.5
1
0.5
1
0.3
0.6
t_BE
Bulk Erase Time
1.5
3
Note: 1. TS_CKH + TS_CKL must be greater than or equal to 1/ F_CLK
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write status Register instruction when Status Register Protect Bit is set at 1.
Unit
MHz
MHz
ns
ns
V / ns
V / ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ms
ms
s
s
This Data Sheet may be revised by subsequent versions ₂₃ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2006/12/26