EN25LF10 Datasheet, PDF (26/30 Pages) Eon Silicon Solution Inc. – 1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

Table 11. DATA RETENTION and ENDURANCE
Parameter Description
Minimum Pattern Data Retention Time
Erase/Program Endurance
Test Conditions
150°C
125°C
-40 to 85 °C
EN25LF10
Min
10
20
100k
Unit
Years
Years
cycles
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Input voltage with respect to V_ss on all pins except I/O pins
(including A9, Reset and OE#)
Min
-1.0 V
Max
12.0 V
Input voltage with respect to V_ss on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note : These are latch up characteristics and the device should never be put under these conditions. Refer to
Absolute Maximum ratings for the actual operating limits.
Table 13. CAPACITANCE
( V_CC = 2.35-3.6V)
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
C_IN
Input Capacitance
V_IN = 0
6
C_OUT
Output Capacitance
V_OUT = 0
8
Note : Sampled only, not 100% tested, at TA = 25°C and a frequency of 20MHz.
Unit
pF
pF
This Data Sheet may be revised by subsequent versions ₂₆ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2008/06/23