EN25LF10 Datasheet, PDF (18/30 Pages) Eon Silicon Solution Inc. – 1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

EN25LF10
and other instructions will be accepted. The CS# pin must remain high during the tRES1 time
duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated
by driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The
Device ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as
shown in Figure 17. The Device ID value for the EN25LF10 is listed in Table 5. The Device ID can
be read continuously. The instruction is completed by driving CS# high.
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device
was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is
immediate. If the device was previously in the Deep Power-down mode, though, the transition to the
Standby Power mode is delayed by tRES2, and Chip Select (CS#) must remain High for at least
tRES2 (max), as specified in Table 10. Once in the Stand-by Power mode, the device waits to be
selected, so that it can receive, decode and execute instructions.
Except while an Erase, Program or Write Status Register cycle is in progress, the Release from
Deep Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device
ID of the device, and can be applied even if the Deep Power-down mode has not been entered.
Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program
or Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in
progress.
Figure 16. Release Power-down Instruction Sequence Diagram
Figure 17. Release Power-down / Device ID Instruction Sequence Diagram
This Data Sheet may be revised by subsequent versions ₁₈ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2008/06/23