EN29LV040A Datasheet, PDF (24/35 Pages) Eon Silicon Solution Inc. – 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

Table 10. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE Controlled Writes
Parameter
Symbols
JEDEC Standard
Description
t_AVAV t_WC
Write Cycle Time
Min
t_AVEL
t_AS
Address Setup Time
Min
t_ELAX
t_AH
Address Hold Time
Min
t_DVEH t_DS
Data Setup Time
Min
t_EHDX t_DH
Data Hold Time
Min
t_OES
Output Enable Setup Time
Min
t_OEH
t_GHEL
t_WLEL
t_GHEL
t_WS
Output Enable Read
Min
Hold Time
Toggle and
Min
Data Polling
Read Recovery Time before
Min
Write ( OE High to CE Low)
Min
W E SetupTime
t_EHWH t_WH
W E Hold Time
Min
t_ELEH
t_CP
Write Pulse Width
Min
t_EHEL
t_CPH
Write Pulse Width High
Min
t_WHWH1 t_{WHWH1 Programming Operation}
Typ
Max
t_WHWH2 t_{WHWH2 Sector Erase Operation}
Typ
t_VCS
Vcc Setup Time
Min
t_VIDR
Rise Time to V_ID
Min
EN29LV040A
Speed Options
-45R -55R -70
-90
Unit
45
55
70
90
ns
0
0
0
0
ns
35
45
45
45
ns
20
25
30
45
ns
0
0
0
0
ns
0
0
0
0
ns
0
0
0
0
ns
10
10
10
10
ns
0
0
0
0
ns
0
0
0
0
ns
0
0
0
0
ns
25
30
35
45
ns
20
20
20
20
ns
8
8
8
8
µs
300 300 300 300
µs
0.5
0.5
0.5
0.5
s
50
50
50
50
µs
500 500 500 500
ns
This Data Sheet may be revised by subsequent versions ₂₄ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2005/08/16