EN29LV040A Datasheet, PDF (20/35 Pages) Eon Silicon Solution Inc. – 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

Table 7. DC Characteristics
(T_a = 0°C to 70°C or - 40°C to 85°C; V_CC = 2.7-3.6V)
EN29LV040A
Symbol
Parameter
Test Conditions
Min
Typ ^{Max Unit}
I_LI
I_LO
I_CC1
I_CC2
I_CC3
I_CC4
Input Leakage Current
Output Leakage Current
Supply Current (read - CMOS)
Supply Current (Standby - CMOS)
Supply Current (Program or Erase)
Automatic Sleep Mode
0V≤ V_IN ≤ Vcc
0V≤ V_OUT ≤ Vcc
CE# = V_IL; OE# = V_IH;
f = 5MHz
CE# = Vcc ± 0.3V
Byte program, Sector or
Chip Erase in progress
V_IH = Vcc ± 0.3 V
V_IL = Vss ± 0.3 V
±1
µA
±1
µA
7
12
mA
1
5.0
µA
15
30
mA
1
5.0
µA
V_IL
Input Low Voltage
-0.5
0.8
V
V_IH
V_OL
V_OH
V_ID
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
A9 Voltage (Electronic Signature)
I_OL = 4.0 mA
I_OH = -2.0 mA
I_OH = -100 µA,
0.7 x
Vcc
0.85 x
Vcc
Vcc -
0.4V
10.5
Vcc ±
0.3
V
0.45
V
V
V
11.5
V
I_ID
A9 Current (Electronic Signature)
A9 = V_ID
Supply voltage (Erase and
V_LKO
Program lock-out)
2.3
100
µA
2.5
V
This Data Sheet may be revised by subsequent versions ₂₀ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2005/08/16