EN29LV040A Datasheet, PDF (22/35 Pages) Eon Silicon Solution Inc. – 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

EN29LV040A
Table 8. AC CHARACTERISTICS
Read-only Operations Characteristics
Parameter
Symbols
JEDEC Standard
t_AVAV
t_RC
Description
Read Cycle Time
Test
Setup
Speed Options
-45R -55R -70
Min 45 55 70
-90 Unit
90 ns
t_AVQV
t_ELQV
t_GLQV
t_ACC
t_CE
t_OE
Address to Output Delay
Chip Enable To Output Delay
CE = V_IL ^{Max 45}
55
70
90 ns
OE = V_IL
OE = V_IL ^{Max 45}
55
70
90 ns
Output Enable to Output Delay
Max 25 30 30 35 ns
t_EHQZ t_DF
Chip Enable to Output High Z
Max 10 15 20 20 ns
t_GHQZ t_DF
t_AXQX t_OH
Output Enable to Output High Z
Output Hold Time from
Addresses, CE or OE ,
whichever occurs first
Max 10 15 20 20 ns
Min 0
0
0
0 ns
Notes:
For -45R,-55R,70
Vcc = 3.0V ± 5%
Output Load : 1 TTL gate and 30pF
Input Rise and Fall Times: 5ns
Input Rise Levels: 0.0 V to Vcc
Timing Measurement Reference Level, Input and Output: 1.5 V
For all others:
Vcc = 3.0V ± 5%
Output Load: 1 TTL gate and 100 pF
Input Rise and Fall Times: 5 ns
Input Pulse Levels: 0.0 V to Vcc
Timing Measurement Reference Level, Input and Output: 1.5 V
Figure 5. AC Waveforms for READ Operations
This Data Sheet may be revised by subsequent versions ₂₂ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2005/08/16