EN25F20_1 Datasheet, PDF (23/33 Pages) Eon Silicon Solution Inc. – 2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector

Power-up Timing
EN25F20
Figure 21. Power-up Timing
Table 8. Power-Up Timing and Write Inhibit Threshold
Symbol
tVSL(1)
tPUW(1)
VWI(1)
Parameter
VCC(min) to CS# low
Time delay to Write instruction
Write Inhibit Voltage
Note:
1.The parameters are characterized only.
2. VCC (max.) is 3.6V and VCC (min.) is 2.7V
Min.
10
1
1
Max. Unit
µs
10
ms
2.5
V
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The
Status Register contains 00h (all Status Register bits are 0).
This Data Sheet may be revised by subsequent versions
23
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2008/12/15
www.eonssi.com