EN25F20_1 Datasheet, PDF (19/33 Pages) Eon Silicon Solution Inc. – 2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector

EN25F20
time duration of tRES1 (See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The CS# pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device
ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in
Figure 17. The Device ID value for the EN25F20 are listed in Table 5. The Device ID can be read
continuously. The instruction is completed by driving CS# high.
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was
not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate.
If the device was previously in the Deep Power-down mode, though, the transition to the Standby Power
mode is delayed by tRES2, and Chip Select (CS#) must remain High for at least tRES2 (max), as
specified in Table 10. Once in the Stand-by Power mode, the device waits to be selected, so that it can
receive, decode and execute instructions.
Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep
Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device ID of the
device, and can be applied even if the Deep Power-down mode has not been entered.
Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program or
Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in
progress.
Figure 16. Release Power-down Instruction Sequence Diagram
Figure 17. Release Power-down / Device ID Instruction Sequence Diagram
This Data Sheet may be revised by subsequent versions
19
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2008/12/15
www.eonssi.com