EM6635 Datasheet, PDF (33/39 Pages) EM Microelectronic - MARIN SA – Low Power Microcontroller with RC and 32kHz oscillators and 9 high drive outputs

EM6635
19. Electrical Specifications
19.1 Absolute maximum Ratings
Min.
Max.
Unit
Power supply VDD-VSS
-0.2
+3.6
V
Input Voltage
VSS -0.2
VDD +0.2
V
Storage Temperature
-40
+125
°C
Electrostatic discharge to
-2000
+2000
V
Mil-Std-883C method 3015.7 with ref. to VSS
Maximum soldering conditions
10s x 250°C
Stresses above these maximum ratings may cause permanent damage to the device. Exposure beyond specified electrical
characteristics may affect device reliability or cause malfunction.
19.2 Handling Procedures
This device has built-in protection against high static voltages or electric fields; however, anti-static precautions should be
taken as for any other CMOS component.
Unless otherwise specified, correct operation can only occur when all terminal voltages are kept within the supply voltage
range.
19.3 Standard Operating Conditions
Parameter
MIN
TYP
MAX
Unit
Description
Temperature
-20
25
85
°C
VDD _Range1
VDD _Range2
IVSS max
IVDD max
VSS
1.6
3.0
3.6
1.2
1.5
1.8
300
300
0
V
with internal voltage regulator
V
without internal voltage regulator
mA
Maximum current out of VSS Pin
mA
Maximum current into VDD Pin
V
Reference terminal
CVRR (Note2)
100
nF
regulated voltage capacitor
fQ
32768
Hz
nominal frequency
RQS
35
kOhm
typical quartz serial resistance
CL
8.2
pF
typical quartz load capacitance
df/f
± 30
ppm
quartz frequency tolerance
Note 2: This capacitor filters switching noise from VDD to keep it away from the internal logic cells.
In noisy systems the capacitor should be chosen bigger than minimum value.
19.4 DC Characteristics - Power Supply
Conditions: VDD =1.55V, T=+25°C, without internal voltage regulator (unless otherwise specified)
Parameter
Conditions
Symbol
Min. Typ. Max. Unit
ACTIVE supply current
(Note3,4)
-20°C to +85°C (Note3,4)
IVDDA
1.5
2.5
µA
3.5
ACTIVE supply current
at 250kHz (Note4)
IVDDA2
at 250kHz, -20°C to +85°C (Note4)
29
45
µA
60
HALT supply current
(Note3)
-20°C to +85°C (Note3)
IVDDH
0.4
0.8
µA
1.0
POR static level
VPOR
0.7
1.01 1.2
V
RAM data retention
VRD1
1.0
V
Note 3: Active and standby current measurements are made with oscillator driven by an external square wave signal of
32.768kHz and an amplitude of VDD voltage.
Note 4: For well defined current measurement, a special test-loop is installed in SW with successive write and read of
two addresses. For this, 5 instructions must be reserved in the ROM code. This will be done at
EM Microelectronic-Marin.
Copyright  2002, EM Microelectronic-Marin SA
33
03/03 REV. B
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