EMP216MFAW Datasheet, PDF (6/11 Pages) Emerging Memory & Logic Solutions Inc – 2Mx16 Pseudo Static RAM

AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
Input Pulse Level : 0.2V to V_CCQ-0.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : V_CCQ/2
Output Load (See right) : CL¹⁾ = 30pF
1. Including scope and Jig capacitance
Preliminary
EMP216MFAW Series
2Mx16 Pseudo Static RAM
Dout
CL¹⁾
AC CHARACTERISTICS (V_cc = 2.7 to 3.3V, Gnd = 0V, T_A = -25C to +85^oC)
Parameter List
Symbol
Speed
Min
Max
Read Cycle Time
t_RC
70
20k
Address access time
t_AA
-
70
Chip enable to data output
t_CO
-
70
Output enable to valid output
t_OE
-
25
UB#, LB# enable to data output
t_BA
-
70
Read
Chip enable to low-Z output
UB#, LB# enable to low-Z output
t_LZ
10
-
t_BLZ
10
-
Output enable to low-Z output
t_OLZ
5
-
Chip disable to high-Z output
t_HZ
0
15
UB#, LB# disable to high-Z output
t_BHZ
0
15
Output disable to high-Z output
t_OHZ
0
15
Output hold from Address change
t_OH
5
-
Write Cycle Time
t_WC
70
20k
Chip enable to end of write
t_CW
60
-
Address setup time
t_AS
0
-
Address valid to end of write
t_AW
60
-
UB#, LB# valid to end of write
t_BW
60
-
Write
Write pulse width
t_WP
50
-
Write recovery time
t_WR
0
-
Write to output high-Z
t_WHZ
0
15
Data to write time overlap
t_DW
20
-
Data hold from write time
t_DH
0
-
End write to output low-Z
t_OW
5
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Â¥
Rev 0.0