EMP216MFAW Datasheet, PDF (2/11 Pages) Emerging Memory & Logic Solutions Inc – 2Mx16 Pseudo Static RAM

2Mb x16 Pseudo Static RAM Specification
Preliminary
EMP216MFAW Series
2Mx16 Pseudo Static RAM
GENERAL DESCRIPTION
The EMP216MFAW series is 33,554,432 bits of Pseudo SRAM which uses DRAM type memory cells, but
this device has refresh-free operation and extreme low power consumption technology. Furthermore the
interface is compatible to a low power Asynchronous type SRAM. The EMP216MFAW is organized as
2,097,152 Words x 16 bit.
FEATURES
- Organization :2M x16
- Power Supply Voltage : 2.7 ~ 3.3V
- Separated I/O power(VccQ) & Core power(Vcc)
- Three state outputs
- Byte read/write control by UB# /LB#
- Support Direct Deep Power Down control by ZZ# and Auto-TCSR for power saving
PRODUCT FAMILY
Part Number
Operating Temp. Power Supply
EMP216MFAW-70E _-25^o_{C to 85}^o_C
2.7V to 3.3V
Speed
(t_RC)
70ns
Power Dissipation
Standby
(I_SB1, Max.)
Operating
(I_CC2, Max.)
100uA
25mA
FUNCTION BLOCK DIAGRAM
ZZ#
CS#
UB#
LB#
WE#
OE#
CONTROL
LOGIC
Self-Refresh
CONTROL
A0~A20
ADDRESS
DECODER
DQ0~
DQ15
Din/Dout BUFFER
¡
COLUMN SELECT
Memory Array
2M X 16
I/O CIRCUIT
Rev 0.0