EMP116MFAW Datasheet, PDF (5/11 Pages) Emerging Memory & Logic Solutions Inc – 1Mx16 Pseudo Static RAM

Preliminary
EMP116MFAW Series
1Mx16 Pseudo Static RAM
RECOMMENDED DC OPERATING CONDITIONS ¹⁾
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Min
Typ
V_CC
2.7
3.0
V_CCQ
2.7
3.0
V_SS, V_SSQ
0
0
V_IH
0.8 * V_CCQ
-
V_IL
-0.2³⁾
-
1. T_A= -25 to 85^oC, otherwise specified
2. Overshoot: VCC +1.0 V in case of pulse width < 20ns
3. Undershoot: -1.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE¹⁾ (f =1MHz, T_A=25^oC)
Max
3.3
3.3
0
V_CCQ + 0.2²⁾
0.2 * V_CCQ
Unit
V
V
V
V
V
Item
Input capacitance
Input/Ouput capacitance
Symbol
C_IN
C_IO
Test Condition
V_IN=0V
V_IO=0V
Min
Max
Unit
-
8
pF
-
8
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current (CMOS)
Symbol
Test Conditions
I_LI
V_IN=V_SS to V_CCQ , V_CC=V_CCmax
I_LO
CS#=V_IH , ZZ#=V_IH , OE#=V_IH or WE#=V_IL ,
V_IO=V_SS to V_CCQ , V_CC=V_CCmax
I_CC1
Cycle time=1µs, 100% duty, I_IO=0mA,
CS#<0.2V, ZZ#=V_IH , V_IN<0.2V or V_IN>V_CCQ-0.2V
I_CC2
Cycle time = Min, I_IO=0mA, 100% duty,
CS#=V_IL, ZZ#=V_IH, V_IN=V_IL or V_IH
V_OL
I_OL = 0.5mA, V_CC=V_CCmin
V_OH I_OH = -0.5mA, V_CC=V_CCmin
CS#,ZZ#>V_CCQ-0.2V, Other inputs = 0 ~ V_CCQ
I_SB
(Typ. condition : V_CC=3.0V @ 25^oC)
(Max. condition : V_CC=3.3V @ 85^oC)
Min
Typ
-1
-
-1
-
-
-
-
-
-
-
0.8*V_CCQ
-
Standard
Reduced
Low Power
Max Unit
1
uA
1
uA
3
mA
25
mA
0.2*V_CCQ V
-
V
150
120
uA
100
1. Maximum Icc specifications are tested with V_CC = V_CCmax.
¤
Rev 0.0