EMP116MFAW Datasheet, PDF (2/11 Pages) Emerging Memory & Logic Solutions Inc – 1Mx16 Pseudo Static RAM

1Mb x16 Pseudo Static RAM Specification
Preliminary
EMP116MFAW Series
1Mx16 Pseudo Static RAM
GENERAL DESCRIPTION
The EMP116MFAW series is 16,777,216 bits of Pseudo SRAM which uses DRAM type memory cells, but
this device has refresh-free operation and extreme low power consumption technology. Furthermore the
interface is compatible to a low power Asynchronous type SRAM. The EMP116MFAW is organized as
1,048,576 Words x 16 bit.
FEATURES
- Organization :1M x16
- Power Supply Voltage : 2.7 ~ 3.3V
- Separated I/O power(VccQ) & Core power(Vcc)
- Three state outputs
- Byte read/write control by UB# /LB#
- Support Direct Deep Power Down control by ZZ# and Auto-TCSR for power saving
PRODUCT FAMILY
Part Number
Operating Temp. Power Supply
RMP116MFAW-70E _-25^o_{C to 85}^o_C
2.7V to 3.3V
Speed
(t_RC)
70ns
Power Dissipation
Standby
(I_SB1, Max.)
Operating
(I_CC2, Max.)
100uA
25mA
FUNCTION BLOCK DIAGRAM
ZZ#
CS#
UB#
LB#
WE#
OE#
CONTROL
LOGIC
Self-Refresh
CONTROL
A0~A19
ADDRESS
DECODER
DQ0~
DQ15
Din/Dout BUFFER
¡
COLUMN SELECT
Memory Array
1M X 16
I/O CIRCUIT
Rev 0.0