HB52F649E1 Datasheet, PDF (9/16 Pages) Elpida Memory – 512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC133SDRAM

Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V_SS
Supply voltage relative to V_SS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Note: 1. Respect to V_SS
Symbol
V_T
V_CC
Iout
P_T
Topr
Tstg
HB52F649E1-75B
Value
Unit
Note
–0.5 to V_CC + 0.5
V
1
(≤ 4.6 (max))
–0.5 to +4.6
V
1
50
mA
18.0
W
0 to +55
°C
–50 to +100
°C
DC Operating Conditions (Ta = 0 to +55°C)
Parameter
Symbol
Min
Max
Supply voltage
V_CC
3.0
3.6
V_SS
0
0
Input high voltage
V_IH
2.0
V_CC
Input low voltage
V_IL
0
0.8
Notes: 1. All voltage referred to V_SS
2. The supply voltage with all VCC pins must be on the same level.
3. The supply voltage with all VSS pins must be on the same level.
4. V_IH (max) = V_CC + 2.0 V for pulse width ≤ 3 ns at V_CC.
5. V_IL (min) = V_SS − 2.0 V for pulse width ≤ 3 ns at V_SS.
Unit
V
V
V
V
Notes
1, 2
3
1, 4
1, 5
Data Sheet E0021H10
9