MC-4R64CPE6C Datasheet, PDF (8/16 Pages) NEC – Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT

MC-4R64CPE6C
Electrical Specification
Absolute Maximum Ratings
Symbol
Parameter
MIN.
MAX.
Unit
VI,ABS
Voltage applied to any RSL or CMOS signal pad with respect to GND
−0.3
VDD + 0.3
V
VDD,ABS
Voltage on VDD with respect to GND
−0.5
VDD + 1.0
V
TSTORE
Storage temperature
−50
+100
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
E_{DC Recommended Electrical Conditions}
Symbol
Parameter and conditions
O_VDD
VCMOS
Supply voltage
CMOS I/O power supply at pad
VREF
L _VIL
VIH
VIL,CMOS
VIH,CMOS
P _VOL,CMOS
VOH,CMOS
IREF
r _ISCK,CMD
oduct ^ISIN,SOUT
Reference voltage
RSL input low voltage
RSL input high voltage
CMOS input low voltage
CMOS input high voltage
CMOS output low voltage, IOL,CMOS = 1 mA
CMOS output high voltage, IOH,CMOS = −0.25 mA
VREF current, VREF,MAX
CMOS input leakage current, (0 ≤ VCMOS ≤ VDD)
CMOS input leakage current, (0 ≤ VCMOS ≤ VDD)
MIN.
MAX.
Unit
2.50 − 0.13
2.50 + 0.13
V
2.5V controllers 2.5 − 0.13
2.5 + 0.25
V
1.8V controllers
1.8 − 0.1
1.8 + 0.2
1.4 − 0.2
1.4 + 0.2
V
VREF − 0.5
VREF − 0.2
V
VREF + 0.2
VREF + 0.5
V
−0.3
0.5VCMOS − 0.25 V
0.5VCMOS+0.25 VCMOS + 0.3
V
—
0.3
V
VCMOS − 0.3
—
V
−40.0
+40.0
µA
−40.0
+40.0
µA
−10.0
+10.0
µA
8
Preliminary Data Sheet E0051N11