MC-4R64CPE6C Datasheet, PDF (1/16 Pages) NEC – Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT

PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4R64CPE6C
Direct Rambus^TM DRAM RIMM^TM Module
64M-BYTE (32M-WORD x 16-BIT)
Description
EThe Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
O^{MC-4R64CPE6C modules consists of four 128M Direct Rambus DRAM (Direct RDRAM™) devices (µPD488448).}
These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
L ^{board design technologies.}
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous, randomly
addressed memory transactions. The separate control and data buses with independent row and column control yield
over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions per device.
P Features
• 184 edge connector pads with 1mm pad spacing
• 64 MB Direct RDRAM storage
r • Each RDRAM^ has 32 banks, for 128 banks total on module
• Gold plated contacts
o _{• RDRAMs use Chip Scale Package (CSP)}
• Serial Presence Detect support
• Operates from a 2.5 V supply
d _{• Low power and powerdown self refresh modes}
• Separate Row and Column buses for higher efficiency
uct ^{• Over Drive Factor (ODF) support}
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0051N11 (Ver. 1.1)
(Previous No. M14805EJ2V0DS00)
Date Published February 2006 CP (K)
Printed in Japan
This product became EOL in May, 2002.
Eipida Memory, Inc. 2001-2006
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.