MC-458CB646 Datasheet, PDF (8/16 Pages) NEC – 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

MC-458CB646
Synchronous Characteristics
Parameter
Symbol
-A 80
-A 10
Unit Note
MIN.
MAX.
MIN.
MAX.
Clock cycle time
/CAS latency = 3 tCK3
8
(125 MHz)
10
(100 MHz) ns
/CAS latency = 2 tCK2
10
(100 MHz)
13
(77 MHz) ns
Access time from CLK
/CAS latency = 3
/CAS latency = 2
CLK high level width
CLK low level width
Data-out hold time
E_{Data-out low-impedance time}
Data-out high-impedance time /CAS latency = 3
/CAS latency = 2
O^{Data-in setup time}
Data-in hold time
Address setup time
L ^{Address hold time}
tAC3
tAC2
tCH
tCL
tOH
tLZ
tHZ3
tHZ2
tDS
tDH
tAS
tAH
3
3
3
0
3
3
2
1
2
1
6
6
6
6
3
3
3
0
3
3
2
1
2
1
6
ns
1
7
ns
1
ns
ns
ns
1
ns
6
ns
7
ns
ns
ns
ns
ns
CKE setup time
CKE hold time
CKE setup time (Power down exit)
Command (/CS0, /CS2, /RAS, /CAS, /WE,
DQMB0 - DQMB7) setup time
P _{Command (/CS0, /CS2, /RAS, /CAS, /WE,}
DQMB0 - DQMB7) hold time
tCKS
2
tCKH
1
tCKSP
2
tCMS
2
tCMH
1
2
ns
1
ns
2
ns
2
ns
1
ns
Note 1. Output load
r _Output
Z = 50 Ω
o 50pF
duct ^{Remark These specifications are applied to the monolithic device.}
8
Data Sheet E0063N10