MC-458CB646 Datasheet, PDF (1/16 Pages) NEC – 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

DATA SHEET
MOS INTEGRATED CIRCUIT
MC-458CB646
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
Description
EThe MC-458CB646EFB, MC-458CB646PFB and MC-458CB646XFB are 8,388,608 words by 64 bits synchronous
dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
O^{Decoupling capacitors are mounted on power supply line for noise reduction.}
Features
• 8,388,608 words by 64 bits organization
L ^{• Clock frequency and access time from CLK}
Part number
MC-458CB646EFB-A80
P ^{MC-458CB646EFB-A10}
MC-458CB646PFB-A80
r _{MC-458CB646PFB-A10}
o _{MC-458CB646XFB-A80}
d ^{MC-458CB646XFB-A10}
/CAS latency
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Clock frequency
(MAX.)
125 MHz
100 MHz
100 MHz
77 MHz
125 MHz
100 MHz
100 MHz
77 MHz
125 MHz
100 MHz
100 MHz
77 MHz
Access time from CLK
(MAX.)
6 ns
6 ns
6 ns
7 ns
6 ns
6 ns
6 ns
7 ns
6 ns
6 ns
6 ns
7 ns
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
u _{• Possible to assert random column address in every cycle}
• Quad internal banks controlled by BA0 and BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and full page)
c ^{• Programmable wrap sequence (sequential / interleave)}
• Programmable /CAS latency (2, 3)
t ^{• Automatic precharge and controlled precharge}
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ± 10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0063N10 (1st edition)
(Previous No. M13049EJ8V0DS00)
Date Published January 2001 CP (K)
Printed in Japan
This product became EOL in March, 2004.
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.