MC-458CB646 Datasheet, PDF (5/16 Pages) NEC – 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

MC-458CB646
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Voltage on power supply pin relative to GND
Voltage on input pin relative to GND
Short circuit output current
EPower dissipation
Operating ambient temperature
Storage temperature
Symbol
VCC
VT
IO
PD
TA
Tstg
Condition
Rating
Unit
–0.5 to +4.6
V
–0.5 to +4.6
V
50
mA
4
W
0 to 70
°C
–55 to +125
°C
OCaution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
L^{conditions for extended periods may affect device reliability.}
Recommended Operating Conditions
Parameter
Supply voltage
P _{High level input voltage}
Low level input voltage
Operating ambient temperature
Symbol
VCC
VIH
VIL
TA
Condition
MIN.
3.0
2.0
−0.3
0
TYP.
3.3
MAX. Unit
3.6
V
VCC + 0.3 V
+0.8
V
70
°C
r _{Capacitance (TA = 25 °C, f = 1 MHz)}
o _Parameter
Input capacitance
duct _{Data input/output capacitance}
Symbol
Test condition
MIN. TYP. MAX. Unit
CI1 A0 - A11, BA0 (A13), BA1 (A12), /RAS, /CAS, /WE 15
40
pF
CI2 CLK0, CLK2
20
40
CI3 CKE0
15
40
CI4 /CS0, /CS2
10
20
CI5 DQMB0 - DQMB7
3
13
CI/O DQ0 - DQ63
4
13
pF
Data Sheet E0063N10
5