MC-458CB642XS Datasheet, PDF (8/14 Pages) Elpida Memory – 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

MC-458CB642XS
Synchronous Characteristics
Parameter
Symbol
-A75
Unit Note
MIN.
MAX.
Clock cycle time
/CAS latency = 3
tCK3
7.5
(133 MHz)
ns
/CAS latency = 2
tCK2
10
(100 MHz)
ns
Access time from CLK
/CAS latency = 3
tAC3
/CAS latency = 2
tAC2
CLK high level width
tCH
2.5
CLK low level width
tCL
2.5
E_{Data-out hold time}
/CAS latency = 3
tOH3
3
/CAS latency = 2
tOH2
3
Data-out low-impedance time
tLZ
0
OData-out high-impedance time /CAS latency = 3
tHZ3
3
/CAS latency = 2
tHZ2
3
Data-in setup time
tDS
1.5
Data-in hold time
tDH
0.8
L _{Address setup time}
tAS
1.5
Address hold time
tAH
0.8
CKE setup time
tCKS
1.5
CKE hold time
tCKH
0.8
P _{CKE setup time (Power down exit)}
tCKSP
1.5
Command (/CS0, /RAS, /CAS, /WE,
tCMS
1.5
DQMB0 - DQMB7) setup time
r _{Command (/CS0, /RAS, /CAS, /WE,}
tCMH
0.8
DQMB0 - DQMB7) hold time
o _{Note 1. Output load}
d ^Output
Z = 50 Ω
uct _{Remark These specifications are applied to the monolithic device.}
5.4
ns
1
6
ns
1
ns
ns
ns
1
ns
1
ns
5.4
ns
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
50 pF
8
Data Sheet E0115N20