MC-458CB642XS Datasheet, PDF (5/14 Pages) Elpida Memory – 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

MC-458CB642XS
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Voltage on power supply pin relative to GND
Voltage on input pin relative to GND
EShort circuit output current
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCC
VT
IO
PD
TA
Tstg
Condition
Rating
Unit
–0.5 to +4.6
V
–0.5 to +4.6
V
50
mA
4
W
0 to 70
°C
–55 to +125
°C
OL _Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
P ^{Supply voltage}
High level input voltage
Low level input voltage
Operating ambient temperature
Symbol
VCC
VIH
VIL
TA
Condition
MIN.
3.0
2.0
–0.3
0
TYP.
3.3
MAX. Unit
3.6
V
VCC + 0.3 V
+0.8
V
70
°C
ro Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Input capacitance
duct _{Data input/output capacitance}
Symbol
Test condition
MIN.
CI1 A0 - A11, BA0 (A13), BA1 (A12), 15
/RAS, /CAS, /WE
CI2 CLK0
23
CI3 CKE0
15
CI4 /CS0
15
CI5 DQMB0 - DQMB7
5
CI/O DQ0 - DQ63
5
TYP.
MAX. Unit
30
pF
37
26
26
10
12
pF
Data Sheet E0115N20
5