EDS2532EEBH-75 Datasheet, PDF (6/50 Pages) Elpida Memory – 256M bits SDRAM (8M words x 32 bits)

EDS2532EEBH-75
DC Characteristics 2 (TA = 0°C to +70°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V)
Parameter
Symbol min.
max.
Unit Test condition
Notes
Input leakage current
ILI
–1
1
Output leakage current
ILO
–1.5
1.5
Output high voltage
VOH
VDD –0.2
—
Output low voltage
VOL
—
0.2
Note: 1. Driver strength is Half condition.
µA 0 ≤ VIN ≤ VDD
µA 0 ≤ VOUT ≤ VDD, DQ = disable
V
IOH = –0.1 mA
1
V
IOL = 0.1 mA
1
Pin Capacitance (TA = 25°C, VDD, VDDQ = 1.8V ± 0.1V)
Parameter
Symbol Pins
min.
typ.
max.
Unit
Notes
Input capacitance
CI1
CLK
2.0
—
3.5
pF
Address, CKE, /CS,
CI2
/RAS, /CAS, /WE, 2.0
—
DQM
3.5
pF
Data input/output
capacitance
CI/O
DQ
3.0
—
5.5
pF
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1MHz, 0.5 × VDDQ, 200mV swing.
3. DQM = VIH to disable DOUT.
4. This parameter is sampled and not 100% tested.
1, 2, 4
1, 2, 4
1, 2, 3, 4
Preliminary Data Sheet E0639E50 (Ver. 5.0)
6