EDE1108AESE Datasheet, PDF (26/78 Pages) Elpida Memory – 1G bits DDR2 SDRAM

EDE1108AESE, EDE1116AESE
Pin Function
CK, /CK (input pins)
CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the
positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK
(both directions of crossing).
/CS (input pin)
All commands are masked when /CS is registered high. /CS provides for external rank selection on systems with
multiple ranks. /CS is considered part of the command code.
/RAS, /CAS, /WE (input pins)
/RAS, /CAS and /WE (along with /CS) define the command being entered.
A0 to A13 (input pins)
Provided the row address for Active commands and the column address and Auto Precharge bit for Read/Write
commands to select one location out of the memory array in the respective bank. The address inputs also provide
the op-code during mode register set commands.
[Address Pins Table]
Address (A0 to A13)
Part number
Row address
EDE1108AESE
AX0 to AX13
EDE1116AESE
AX0 to AX12
Note: 1. A13 pin is NC for × 16 organization.
Column address
AY0 to AY9
AY0 to AY9
Note
1
A10 (AP) (input pin)
A10 is sampled during a precharge command to determine whether the precharge applies to one bank (A10 = low)
or all banks (A10 = high). If only one bank is to be precharged, the bank is selected by BA0, BA1 and BA2.
BA0, BA1, BA2 (input pins)
BA0, BA1 and BA2 define to which bank an active, read, write or precharge command is being applied. BA0 and
BA1 also determine if the mode register or extended mode register is to be accessed during a MRS or EMRS (1),
EMRS (2) cycle.
[Bank Select Signal Table]
BA0
BA1
BA2
Bank 0
L
L
L
Bank 1
H
L
L
Bank 2
L
H
L
Bank 3
H
H
L
Bank 4
L
L
H
Bank 5
H
L
H
Bank 6
L
H
H
Bank 7
H
H
H
Remark: H: VIH. L: VIL.
Data Sheet E1290E30 (Ver. 3.0)
26