HB52R649E1U-A6B Datasheet, PDF(2/20 Page) Elpida Memory – 512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM

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HB52R649E1U-A6B Datasheet, PDF (2/20 Pages) Elpida Memory – 512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM

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HB52R649E1U-A6B/B6B

â¢ Burst read/write operation and burst read/single write operation capability

â¢ Programmable burst length: 1/2/4/8

â¢ 2 variations of burst sequence

ï£§ Sequential

ï£§ Interleave

â¢ Programmable CE latency : 3/4 (HB52R649E1U-A6B)

: 4 (HB52R649E1U-B6B)

â¢ Byte control by DQMB

â¢ Refresh cycles: 8192 refresh cycles/64 ms

â¢ 2 variations of refresh

ï£§ Auto refresh

ï£§ Self refresh

Ordering Information

Type No.

HB52R649E1U-A6B

HB52R649E1U-B6B

Frequency

100 MHz

CE latency

3/4

Package

Contact pad

168-pin dual lead out socket type Gold

Pin Arrangement

1 pin 10 pin 11 pin 40 pin 41 pin

84 pin

85 pin 94 pin 95 pin 124 pin 125 pin

168 pin

Preliminary Data Sheet E0022H10

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