HB54R1G9F2-B75B Datasheet, PDF (11/16 Pages) Elpida Memory – 1GB Registered DDR SDRAM DIMM

HB54R1G9F2-B75B/10B
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
–1.0 to +4.6
V
1
Supply voltage relative to VSS
VCC, VCCQ
–1.0 to +4.6
V
1
Short circuit output current
IOUT
50
mA
Power dissipation
PT
18
W
Operating ambient temperature
TA
0 to +70
°C
Storage temperature
Tstg
–50 to +100
°C
Notes: 1. Respect to VSS.
E _{2. DDR SDRAM component specification.}
DC Operating Conditions (TA = 0 to +70°C) (DDR SDRAM Component Specification)
Parameter
O_{Supply voltage}
Input reference voltage
L ^{Termination voltage}
Symbol
VCC, VCCQ
VSS
VREF
VTT
min.
2.3
0
1.15
VREF – 0.04
Typ
2.5
0
1.25
VREF
max.
2.7
0
1.35
VREF + 0.04
2
Unit
V
V
V
V
Notes
1, 2
1
1
DC Input high voltage
VIH
VREF + 0.18 —
VCCQ + 0.3 V
1, 3
DC Input low voltage
VIL
–0.3
—
VREF – 0.18 V
1, 4
DC Input signal voltage
VIN (DC)
–0.3
—
VCCQ + 0.3 V
5
DC differential input voltage
VSWING (DC) 0.36
—
VCCQ + 0.6 V
6
Ambient illuminance
—
—
—
100
lx
P Notes: 1. All parameters are referred to VSS, when measured.
2. VCCQ must be lower than or equal to VCC.
3. VIH is allowed to exceed VCC up to 4.6V for the period shorter than or equal to 5ns.
4. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
r _{5. VIN (DC) specifies the allowable DC execution of each differential input.}
oduct ^{6. VSWING (DC) specifies the input differential voltage required for switching.}
Data Sheet E0089H50 (Ver. 5.0)
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