DG808BC45_15 Datasheet, PDF (8/12 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

SEMICONDUCTOR
DG808BC45
2.5
2.4
Conditions:
2.3
I_T = 3000A
Cs = 4.0uF
2.2
2.1
2
1.9
1.8
Tj = 125 ^oC
1.7
1.6
1.5
1.4
1.3
1.2
Tj = 25 ^oC
1.1
1
20
30
40
50
60
Rate of rise of reverse gate current dI_GQ/dt -
(A/us)
Fig.18 Gate fall time vs rate of rise of reverse gate
current
900
Conditions:
Cs = 4.0uF
800 _{diGQ/dt = 40A/uS}
700
600 _{Tj = 125} ^o_C
500
Tj = 25 ^oC
400
300
200
0
1000
2000
3000
On-state current I_T - (A)
4000
Fig.19 Peak reverse gate current vs on-state current
850
825
Conditions:
I_T = 3000A
800 ^{Cs = 4.0uF}
775
Tj = 125^oC
750
725
Tj = 25^oC
700
675
650
625
600
20 25 30 35 40 45 50 55 60 65
Rate of rise of reverse gate current dI_GQ/dt - (A/us)
Fig.20 Reverse gate current vs rate of rise of reverse
gate current
14000
12000
Conditions:
Cs = 4.0uF
diGQ/dt = 40A/uS
10000
Tj = 125^oC
Tj = 25^oC
8000
6000
4000
2000
0
0
1000
2000
3000
On-state current I_T - (A)
4000
Fig.21 Turn-off gate charge vs on-state current
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