DG808BC45_15 Datasheet, PDF (4/12 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

SEMICONDUCTOR
DG808BC45
2
10
1.8
9
1.6
8
1.4
7
1.2
V_GT
6
1
5
0.8
4
0.6
I_GT
3
0.4
2
0.2
1
0
0
-50 -25 0 25 50 75 100 125 150
Junction temperature Tj - (^oC)
Fig.2 Maximum gate trigger voltage/current vs junction
temperature
4000
3500
3000
2500
2000
1500
1000
Conditions:
Tj = 125 ^oC
V_DM = V_DRM
dI_GQ = 40A/us
500
0
0
2
4
6
8
Snubber capacitance C_S - (uF)
3500
3000
2500
Measured under
pulse conditions.
I_G(ON) = 10A
Half sine wave 10ms
Tj=25^oC
2000
1500
Tj=125^oC
1000
500
0
1
1.5
2
2.5
3
3.5
4
Instantaneous on-state voltage V_TM - (V)
Fig.3 On-state characteristics
Fig.4 Maximum dependence of ITCM on CS
Fig.5 Maximum (limit) transient thermal impedance-
double side cooled
4/12
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