DG808BC45_15 Datasheet, PDF (5/12 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

SEMICONDUCTOR
DG808BC45
40
35
30
25
20
15
10
5
0
0.0001 0.001
0.01
0.1
1
Pulse duration - (s)
Fig.6 Surge (non-repetitive) on-state current vs time
3500
3000
2500
Conditions:
T_j = 125^oC; I_FGM = 40A
Cs = 4.0uF; Rs = 10 Ohms
dI_T/dt = 300A/uS
dI_FG/dt = 40A/uS
2000
V_D = 3000V
V_D = 2000V
1500
1000
V_D = 1000V
500
0
0
1000
2000
3000
On-state current I_T -(A)
Fig.7 Turn-on energy vs on-state current
4500
4000
3500
3000
2500
Conditions:
T_j = 125^oC; I_T = 3000A
Cs = 4.0uF
Rs = 10 Ohms
d_IT/dt = 300A/uS
dI_FG/dt = 40A/uS
2000
1500
1000
V_D = 3000V
V_D = 2000V
500
V_D = 1000V
0
0
20
40
60
80
100
Peak forward gate current I_FGM - (A)
Fig.8 Turn-on energy vs forward gate current
3500
3000
2500
Conditions:
I_T = 3000A;T_j = 125^oC
C_S = 4.0uF;R_S = 10 Ohms
I_FGM = 40A;di_FG /dt =
40A/us
V_D = 3000V
2000
1500
V_D = 2000V
1000
500
V_D = 1000V
0
0
100
200
300
400
Rate of rise of on-state current di_T/dt - (A/us)
Fig.9 Turn-on energy vs rate of rise of on-state current
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