MA31755 Datasheet, PDF (7/13 Pages) Dynex Semiconductor – 16-Bit Feedthrough Error Detection & Correction Unit EDAC

MA31755
4. AC CHARACTERISTICS
Parameter
Description
Min
T1
PD[0:16] to MD[0:16] , CB[0:5] valid
-
T2
MD[0:16] to PD[0:16] valid
-
T3
CB[0:5] to PD[0:16] valid
-
T4
MD[0:16] to CERRN and NCERRN valid
-
CB[0:5] to CERRN and NCERRN valid
T5
RDWN, CS0 rising to PD[0:16] driven (processor read)
5
CS1N, CS2N falling to PD[0:16] driven (processor read)
T6
CS0 rising to error flags changing
-
CS1N, CS2N falling to error flags changing
T7
RDWN, CS0 falling to PD[0:16] Hi-Z
-
CS1N,CS2N rising to PD[0:16] Hi-Z
T8
CS0 falling to error flags high
-
CS1N, CS2N rising to error flags high
T9
RDWN, CS1N and CS2N falling to MD[0:16] and CB[0:5] 5
driven (processor write)
CS0 rising to MD[0:16] and CB[0:5] driven (processor
write)
T10
CS0 falling to MD[0:16] and CB[0:5] Hi-Z
5
RDWN, CS1N, CS2N rising to MD[0:16] and CB[0:5] Hi-Z
T11
ENFLG to CERRN and NCERRN valid
-
T12
ENCOR to PD[0:16] valid
-
T13
XERRN to NCERRN valid
-
Mil-Std-883, method 5005, subgroups 9, 10, 11
Figure 10: Timing Parameters
Max Units Notes
25 ns CL = 150pF
30 ns CL = 50pF
35 ns CL = 50pF
40 ns CL = 50pF
20 ns CL = 50pF
25 ns CL = 50pF
30 ns CL = 50pF
25 ns CL = 50pF
20 ns CL = 150pF
25 ns CL = 150pF
20 ns CL = 50pF
20 ns CL = 50pF
10 ns CL = 50pF
5. DC CHARACTERISTICS AND RATINGS
Symbol
VDD
VI
TA
TS
Description
Supply voltage
Input voltage
Operating temperature
Storage temperature
Min.
-0.5
-0.3
-55
-65
Max.
7
VDD+0.3
+125
+150
Figure 11: Absolute Maximum Ratings
Units
V
V
oC
oC
Note: Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or
at any other condition above those indicated in the
operations section of this specification, is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Parameter
VOH
Description
Output high voltage
Min
Max
Vdd- 0.5 -
Unit
V
VOL
Output low voltage
-
Vss+0.5 V
VIH
Input high voltage
Vdd-1.5 -
V
VIL
Input low voltage
-
Vss+1.5 V
IIL, IIH (Note 1) Input current high/low -
10
uA
IOZ (Note 1)
Output tri-state leakage -
0.1
mA
ISS
Standby current
-
10
mA
IDD
Operating current
-
100
mA
Conditions VDD = 4.5 to 5.5V, TA = -55 to +125°C
Mil-Std-883, method 5005, subgroups 1, 2, 3
Note 1: Worst case at TA = +125°C, guaranteed but not tested at TA = -55°C.
Notes
IOH = 15mA on MD[0:16] / CB[0:5]
IOH = 5mA on other outputs.
IOL = -15mA on MD[0:16] / CB[0:5]
IOL = -5mA on other outputs.
VO = 0 to VDD
Figure 12: Operating Electrical Characteristics
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