GP200MHS12 Datasheet, PDF (7/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP200MHS12
500
450
400
350
300
250
200
150
100 _{Tcase = 125˚C}
V_ge = ±15V
50 R_g = 4.7Ω*
*Recommended minimum value
0
0
200
400
600
800 1000
Collector-emitter voltage, V_ce - (V)
RBSOA
Fig. 11 Forward bias safe operating area
1200
1000
100
Diode
Transistor
10
1
0.001
0.01
0.1
1
10
Pulse width, t_p - (s)
Fig. 12 Transient thermal impedance
500
450
PWM Sine Wave.
400
Power Factor = 0.9,
Modulation Index = 1
350
300
250
200
150
100
Conditions:
50 T_j = 125°C, T_c = 75°C,
R_g = 4.7Ω, V_CC = 600V
0
1
10
50
f_max - (kHz)
Fig. 13 3 Phase inverter operating frequency
320
280
240
200
160
120
80
40
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Case temperature, T_case - (˚C)
Fig. 14 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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