GP200MHS12 Datasheet, PDF (5/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP200MHS12
TYPICAL CHARACTERISTICS
400
Common emitter
350 ^{Tcase = 25˚C}
V_ge = 20/15/12/10V
300
250
200
150
100
50
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
400
Common emitter
T_case = 125˚C
350
V_ge = 20/15/12/10V
300
250
200
150
100
50
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
60
T_j = 125˚C
V_GE = ±15V
A
50 ^{VCE = 600V}
B
40
C
30
20
10
A: R_g = 10Ω
B: R_g = 6.2Ω
C: R_g = 4.7Ω
0
0
50
100
150
200
Collector current, I_C - (A)
Fig. 5 Typical turn-on energy vs collector current
50
T_j = 125˚C
45 ^VGE ^{= ±15V}
A
V_CE = 600V
40
B
C
35
30
25
20
15
10
A: R_g = 10Ω
5
B: R_g = 6.2Ω
C: R_g = 4.7Ω
0
0
50
100
150
200
Collector current, I_C - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
www.dynexsemi.com