GP200MHS12 Datasheet, PDF (3/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP200MHS12
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise.
Symbol
Parameter
I_CES
Collector cut-off current
I_GES
V_GE(TH)
V
CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
I_F
Diode forward current
I_FM
Diode maximum forward current
V
Diode forward voltage
F
C_ies
Input capacitance
L_M
Module inductance
Test Conditions
V = 0V, V = V
GE
CE
CES
V_GE = 0V, V_CE = V_CES, T_case = 125˚C
V_GE = ±20V, V_CE = 0V
I_C = 10mA, V_GE = V_CE
V_GE = 15V, I_C = 200A
V_GE = 15V, I_C = 200A, , T_case = 125˚C
DC
t_p = 1ms
I_F = 200A
I_F = 200A, T_case = 125˚C
V_CE = 25V, V_GE = 0V, f = 1MHz
-
Min. Typ. Max. Units
-
-
1
mA
-
-
12 mA
-
-
±1 µA
4.5
-
6.5
V
-
2.7
3.5
V
-
3.2
4.0
V
-
-
200 A
-
-
400 A
-
2.2
2.4
V
-
2.3
2.5
V
-
25
-
nF
-
30
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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