GP400DDM12 Datasheet, PDF (6/9 Pages) Dynex Semiconductor – Dual Switch IGBT Module Advance Information

GP400DDM12
800
700
600
T_j = 25˚C
T_j = 125˚C
500
400
300
200
100
0
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, V_F - (V)
Fig.7 Diode typical forward characteristics
1000
900
800
700
600
500
400
300
200 _{Tcase = 125˚C}
V_ge = ±15V
100 R_g = 4.7Ω *
*Recommended minimum value
0
0
200
400
600
800 1000
Collector-emitter voltage, V_ce - (V)
1200
Fig.8 Reverse bias safe operating area
10000
1000 ^{IC max. (single pulse)}
100
10
100
10
t_p = 50µs
t_p = 100µs
1
t_p = 1ms
Diode
Transistor
1
1
10
100
1000
Collector-emitter voltage, V_ce - (V)
Fig.9 Forward bias safe operating area
10000
0.1
1
10
100
1000
Pulse width, t_p - (ms)
Fig.10 Transient thermal impedance
10000
69
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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