GP400DDM12 Datasheet, PDF (5/9 Pages) Dynex Semiconductor – Dual Switch IGBT Module Advance Information

GP400DDM12
TYPICAL CHARACTERISTICS
800
Common emitter
700 ^{Tcase = 25˚C}
V_ge = 20/15/12/10V
600
500
400
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
800
Common emitter
700 ^{Tcase = 125˚C}
V_ge = 20/15/12/10V
600
500
400
300
200
100
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
90
Conditions:
80
V_ce = 600V
T_c = 125°C
R_g = 4.7Ω
70
60
50
40
30
20
10
E_off
E_on
0
0
100
200
300
400
500
Collector current, I_C - (A)
Fig. 5 Typical switching energy vs collector current
160
Conditions:
V_ce = 900V
140 I_C = 400A
T_c = 125°C
120
100
80
60
40
20
E_off
E_on
0
0
4
8
12
16
Gate Resistance, R_g - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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