 English |
|
|
|
|
|
|
|
| GP400DDM12 Datasheet, PDF (4/9 Pages) Dynex Semiconductor – Dual Switch IGBT Module Advance Information | |||
| |||
| ◁ |
GP400DDM12
ELECTRICAL CHARACTERISTICS
T = 25ËC unless stated otherwise
case
Symbol
Parameter
td(off)
Turn-off delay time
tf
Fall time
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
E
Turn-on energy loss
ON
Qrr
Diode reverse recovery charge
Tcase = 125ËC unless stated otherwise
Symbol
Parameter
t
Turn-off delay time
d(off)
tf
Fall time
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
t
Rise time
r
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IC = 400A
V
GE
=
±15V
VCE = 600V
RG(ON) = RG(OFF) = 4.7â¦
L ~ 100nH
IF = 400A, VR = 50% VCES,
dI /dt
F
=
2000A/µs
Min. Typ. Max. Units
-
800
-
ns
-
110
-
ns
-
65
-
mJ
-
700
-
ns
-
170
-
ns
-
45
-
mJ
-
30
-
µC
Test Conditions
IC = 400A
VGE = ±15V
V = 600V
CE
RG(ON) = RG(OFF) = 4.7â¦
L ~ 100nH
IF = 400A, VR = 50% VCES,
dI /dt
F
=
2000A/µs
Min. Typ. Max. Units
-
1000
-
ns
-
150
-
ns
-
80
-
mJ
-
800
-
ns
-
300
-
ns
-
75
-
mJ
-
65
-
µC
49
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese