GP2401ESM18 Datasheet, PDF (6/9 Pages) Dynex Semiconductor – Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

GP2401ESM18
4800
4200
3600
3000
2400
T_j = 25˚C
T_j = 125˚C
1800
1200
600
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, V_F - (V)
Fig. 7 Diode typical forward characteristics
10000
6000
5000
4000
3000
2000
T_case = 125˚C
1000 ^Vge ^{= ±15V}
R_g(off) = 2.2Ω
0
0
400
800
1200
1600
Collector-emitter voltage, V_ce - (V)
Fig. 8 Reverse bias safe operating area
2000
100
1000
I_{C max} (DC)
100
10
t_p = 50µs
t_p = 100µs
10
t_p = 1ms
1
Diode
Transistor
1
1
10
100
1000
Collector emitter voltage, V_ce - (V)
Fig.9 Forward bias safe operating area
10000
0.1
1
10
100
1000
Pulse width, t_p - (ms)
10000
Fig. 10 Transient thermal impedance
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com