GP2401ESM18 Datasheet, PDF (1/9 Pages) Dynex Semiconductor – Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

GP2401ESM18
GP2401ESM18
Hi-Reliability Single Switch Low V_CE(SAT) IGBT Module
Replaces February 2000 version, DS5345-1.0
DS5345-2.4 January 2001
FEATURES
s Low V_CE(SAT)
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I_C(PK)
(typ)
(max)
(max)
1800V
2.6V
2400A
4800A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Low-Loss System Retrofits
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP2401ESM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V_CE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
GP2401ESM18
Note: When ordering, please use the whole part number.
External connection
C1
C2
C3
Aux C
G
Aux E
E1
E2
E3
External connection
Fig. 1 Single switch circuit diagram
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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