GP2401ESM18 Datasheet, PDF (5/9 Pages) Dynex Semiconductor – Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

GP2401ESM18
TYPICAL CHARACTERISTICS
4800
Common emitter
4200 ^{Tcase = 25˚C}
V_ge = 20/15/12/10V
3600
3000
2400
1800
1200
600
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
4800
4200
Common emitter
T_case = 125˚C
V_ge = 20/15/12/10V
3600
3000
2400
1800
1200
600
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
2.0
T_case = 125˚C
1.8 V_GE = 15V
V_CE = 900V
1.6
R_G = 2.2
L = 50nH
1.4
1.2
E_OFF
E_ON
1.0
0.8
0.6
E_REC
0.4
0.2
0
0
400
800 1200 1600 2000 2400
Collector current, I_C - (A)
Fig. 5 Typical switching energy vs collector current
4.5
T_case = 125˚C
4.0
V_GE = 15V
V_CE = 900V
E_ON
I_C = 2400A
3.5 L = 50nH
3.0
E_OFF
2.5
2.0
1.5
1.0
0.5
E_REC
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, R_G - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
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