GP1200FSS18 Datasheet, PDF (5/10 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP1200FSS18
TYPICAL CHARACTERISTICS
2400
Common emitter
2200 _{Tcase = 25˚C}
2000
V_ge = 20/15/12V
1800
1600
1400
V_ge = 10V
1200
1000
800
600
400
200
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
2400
Common emitter
2200 _{Tcase = 125˚C}
2000
V_ge = 20/15/12V
1800
1600
V_ge = 10V
1400
1200
1000
800
600
400
200
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
1.0
T_case = 125˚C
0.9 V_GE = 15V
V_CE = 900V
0.8
R_G = 2.2Ω
L = 50nH
0.7
0.6
0.5
E_OFF
0.4
0.3
0.2
0.1
0
0
200
400
600
800
Collector current, I_C - (A)
E_ON
E_REC
1000 1200
Fig. 5 Typical switching energy vs collector current
2.00
T_case = 125˚C
E_ON
1.75
V_GE = 15V
V_CE = 900V
I_C = 1200A
L = 50nH
1.50
1.25
1.00
E_OFF
0.75
0.50
0.25
E_REC
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, R_G - (Ohms)
Fig. 6 Typicalswitching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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