GP1200FSS18 Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP1200FSS18
Replaces February 2000 version, DS5260-2.0
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 1200A Per Module
GP1200FSS18
Single Switch IGBT Module
DS5260-3.1 January 2001
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I
C(PK)
(typ)
(max)
(max)
1800V
3.5V
1200A
2400A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1200FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1200FSS18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1
C2
G
Aux E
E1
E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
C1
Aux E
G
E2
C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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