GP1200FSS18 Datasheet, PDF (4/10 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP1200FSS18
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise
Symbol
Parameter
t
d(off)
t
f
E
OFF
t_d(on)
t_r
E_ON
Q_rr
I_rr
E_REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
T = 125˚C unless stated otherwise
case
Symbol
Parameter
t_d(off)
t_f
E_OFF
t
d(on)
t
r
E
ON
Q_rr
I
rr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
I_C = 1200A
V_GE = ±15V
V_CE = 900V
R_G(ON) = R_G(OFF) = 2.2Ω
L ~ 50nH
I = 1200A, V = 50% V ,
F
R
CES
dI_F/dt = 4500A/µs
Min. Typ. Max. Units
-
1050 1250 ns
-
130 200 ns
-
550 700 mJ
-
300 400 ns
-
250 400 ns
-
450 650 mJ
-
250 350 µC
-
500
-
A
-
180
-
mJ
Test Conditions
I = 1200A
C
V_GE = ±15V
V_CE = 900V
R
G(ON)
=
R
G(OFF)
=
2.2Ω
L ~ 50nH
I_F = 1200A, V_R = 50% V_CES,
dI_F/dt = 4000A/µs
Min. Typ. Max. Units
-
1150 1350 ns
-
150 300 ns
-
650 850 mJ
-
400 550 ns
-
300 450 ns
-
650 800 mJ
-
425 550 µC
-
600
-
A
-
250
-
mJ
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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