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| ESM4120 Datasheet, PDF (5/8 Pages) Dynex Semiconductor – Recovery Diode | |||
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1000
100
10
IF
⫠50µs
QS = 0
QS
Conditions:
Tj = 125 ËC,
VR = 100V
tp = 1ms
dIR/dt
IRR
IF = 1000A
IF = 500A
IF = 200A
IF = 100A
ESM4120
1
1
1000
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
Fig.3 Recovered charge
1000
Conditions:
Tj = 125ËC,
VR = 100V
100
IF = 1000A
10
1
1
10
100
1000
Rate of rise of reverse current dIR/dt - (A/µs)
Fig.4 Typical reverse recovery current vs rate of rise of forward current
5/8
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