ESM4120 Datasheet, PDF (2/8 Pages) Dynex Semiconductor – Recovery Diode

ESM4120
SURGE RATINGS
Symbol
Parameter
I_FSM
Surge (non-repetitive) forward current
I²t
I²t for fusing
I_FSM
Surge (non-repetitive) forward current
I²t
I²t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R_th(j-c) Thermal resistance - junction to case
R_th(c-h) Thermal resistance - case to heatsink
T_vj
Virtual junction temperature
T_stg
Storage temperature range
-
Clamping force
Conditions
10ms half sine; with 0% V T = 125^oC
RRM, j
10ms half sine; with 50% V T = 125oC
RRM, j
Max. Units
4.5
kA
101 x 10³ A²s
3.6
kA
64.8 x 10³ A²s
Conditions
Double side cooled
Single side cooled
Clamping force 3.5kN
with mounting compound
dc
Anode dc
Cathode dc
Double side
Single side
On-state (conducting)
Min. Max. Units
-
0.07 ^oC/W
- 0.133 ^oC/W
- 0.147 ^oC/W
-
0.02 ^oC/W
-
0.04 ^oC/W
-
125
o_C
-55 125
o_C
3.0 4.0 kN
2/8