ESM4120 Datasheet, PDF (3/8 Pages) Dynex Semiconductor – Recovery Diode

CHARACTERISTICS
Symbol
Parameter
V
Forward voltage
FM
I_RRM
Peak reverse current
t_rr
Reverse recovery time
Q_RA1
Recovered charge (50% chord)
I_RM
Reverse recovery current
K
Soft factor
V_TO
r
T
V_FRM
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
At 450A peak, T = 25^oC
case
At V , T = 125oC
RRM case
I
F
=
200A,
di /dt
RR
=
50A/µs
T = 125^oC, V = 100V
case
R
At T = 125oC
vj
At T = 125oC
vj
di/dt = 1000A/µs, T_j = 125^oC
DEFINITION OF K FACTOR AND Q_RA1
dI_R/dt
t₁
0.5x I_RR
I_RR
Q_RA1 = 0.5x I_RR(t₁ + t₂)
t₂ ^{k = t1/t2}
τ
ESM4120
Typ. Max. Units
-
1.7
V
-
100 mA
0.8
-
µs
-
15
µC
-
34
A
-
-
-
-
1.25 V
-
1.0 mΩ
-
25
V
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