DS1112SG Datasheet, PDF (5/7 Pages) Dynex Semiconductor – Rectifier Diode

DS1112SG
10000
Conditions:
T_j = 150˚C
V_R = 100V
I_F = 1000A
35
400
I²t = β x t
2
30
350
1000
25
300
I²t
20
250
15
200
100
0.1
I_F
Q_S
dI_F/dt
I_RM
1.0
10
100
Rate of decay of forward current, dI_F/dt - (A/µs)
Fig.4 Total stored charge
0.1
Anode side cooled
10
150
5
100
0
50
1
10 1 2 3 5 10 20 50
ms
Cycles at 50Hz
Duration
Fig.5 Surge (non-repetitive) forward current vs time (with
50% V_RRM at T_case 125˚C)
Double side cooled
0.01
0.001
0.001
0.01
Conduction ^{Effective thermal resistance}
Junction to case ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
0.1
1.0
10
Time - (s)
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
5/7
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